Nonvolatile semiconductor memory having three dimension charge confinement
US5055890A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 1990 |
| Grant date | Oct 8, 1991 |
| Priority date | — |
| Expiry date | Jan 25, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/803
Abstract
A layered semiconductor device with a nonvolatile three dimensional memory comprises a storage channel which stores charge carriers. Charge carriers flow laterally through the storage channel from a source to a drain. Isolation material, either a Schottky barrier or a heterojunction, located in a trench of an upper layer controllably retains the charge within the a storage portion determined by the confining means. The charge is retained for a time determined by the isolation materials' nonvolatile characteristics or until a change of voltage on the isolation material and the source and drain permit a read operation. Flow of charge through an underlying sense channel is affected by the presence of charge within the storage channel, thus the presences of charge in the memory can be easily detected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.