Semiconductor cell for neural network and the like
US5055897A · kind A · utility
69Cited by
7References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 27, 1988 |
| Grant date | Oct 8, 1991 |
| Priority date | — |
| Expiry date | Jul 27, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06N3/065
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A cell employing floating gate storage device particularly suited for neural networks. The floating gate from the floating gate device extends to and becomes part of a second, field effect device. Current through the second device is affected by the charge on the floating gate. The weighting factor for the cell is determined by the amount of charge on the floating gate. By charging the floating gate to various levels, a continuum of weighting factors is obtained. Multiplication is obtained since the current through the second device is a function of the weighting factor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.