Thin film transistor
US5055899A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1990 |
| Grant date | Oct 8, 1991 |
| Priority date | — |
| Expiry date | Apr 2, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor comprising a gate electrode, a gate insulating film, and a semiconductor layer, which have the same shape and the same size and stacked one upon another. The transistor further comprises an n-type semiconductor layer formed on the semiconductor layer, an ohmic electrode formed on the n-type semiconductor layer, and a source electrode and a drain electrode both formed on the ohmic electrode. Further, a transparent electrode is electrically connected to the source electrode. The thin film transistor has no step portions. Therefore, the transistor can be manufactured with high yield, and forms a pixel having a high opening ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.