Semiconductor device having a composite insulating interlayer
US5055906A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1991 |
| Grant date | Oct 8, 1991 |
| Priority date | — |
| Expiry date | Feb 12, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a first interconnection pattern formed on a semiconductor substrate, and a second interconnection pattern located in and over a through hole formed at a composite insulating layer structure. The composite insulating layer structure is constituted by a first inorganic insulating film and an organic insulating film. At a peripheral region of the second interconnection pattern, the organic insulating film is partially eliminated to form an eliminated portion. The semiconductor device also has a second inorganic insulating film which is formed over the organic insulating film and is directly formed on the first inorganic insulating film, via the eliminated portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.