Image sensor with high storage capacity per pixel
US5055931A · kind A · utility
4Cited by
5References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1990 |
| Grant date | Oct 8, 1991 |
| Priority date | — |
| Expiry date | Oct 19, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/153
Abstract
Disclosed is a charge-transfer or charge-coupled (CCD) type device, aimed at increasing the charge storage capacity. The disclosed photosensitive device includes a plurality of photosensitive cells. Each photosensitive cell includes an elementary photosensitive zone beneath which there is formed a potential well. According to one characteristic, the potential well has a surface area greater than the surface area of the elementary photosensitive zone. The disclosure can be applied to charge-couped devices that include a non-photosensitive zone between the pixels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.