Hybrid doped fiber-semiconductor amplifier ring laser source
US5056096A · kind A · utility
9Cited by
7References
5Claims
0Family size
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Key dates
| Filing date | Sep 17, 1990 |
| Grant date | Oct 8, 1991 |
| Priority date | — |
| Expiry date | Sep 17, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/1608
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An hybrid laser source has a ring structure including the optical path in a semiconductor amplifier chip (1) and optical fibres (2, 3 and 4). The fibre (2) is rare-earth doped and provides an additional gain medium in the ring, the chip providing its own gain medium. The two gain media are interactive and when the chip input current is modulated the source produces relatively high peak power ultrashort pulses (FIG. 1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.