High current density tunnel junction fabrication from high temperature superconducting oxides
US5057491A · kind A · utility
11Cited by
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18Claims
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Key dates
| Filing date | Dec 16, 1987 |
| Grant date | Oct 15, 1991 |
| Priority date | — |
| Expiry date | Dec 16, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/78
Abstract
High current density tunnel junction devices (12) are fabricated by ion implantation of ions (26) to form buried semiconducting layers (24) in originally homogeneous high temperature superconducting oxide layers (18) formed on superconducting oxide substrates (14). Contacts (20, 22) are made to the oxide substrate and to the oxide layer. In an alternative embodiment, the junction devices (12') are fabricated by ion implantation of ions in portions of the substrate. In this embodiment, contacts are made to the oxide substrate and to portions of the substrate overlying the buried semiconducting junctions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.