Permeable base transistor with gate fingers
US5057883A · kind A · utility
33Cited by
3References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 11, 1990 |
| Grant date | Oct 15, 1991 |
| Priority date | — |
| Expiry date | Jan 11, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A permeable base transistor includes a source region and a drain region confronting each other in a semi-insulating semiconductor layer, a gate electrode having a current penetrating aperture through which a channel current flows disposed between the source region and the drain region and the source and drain regions, and the gate electrode are disposed so that the channel current flows transverse to the thickness of the semi-insulating semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.