Semiconductor integrated circuit device
US5057894A · kind A · utility
11Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 1990 |
| Grant date | Oct 15, 1991 |
| Priority date | — |
| Expiry date | May 23, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a bipolar-CMOS LSI manufactured by a simplified process and realizing a higher density of integration as well as a higher operating speed, in which a base lead-out electrode of a bipolar transistor and respective gate electrodes of a p-channel MISFET and an n-channel MISFET of CMOS transistors are made of an identical conductor film, and the conductor film of the gate electrode of the p-channel MISFET is of p-type, while that of the gate electrode of the n-channel MISFET is of n-type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.