Method for recording information in an optical information memory medium including indium (In) and Antimony (Sb)
US5058061A · kind A · utility
6Cited by
5References
5Claims
0Family size
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Key dates
| Filing date | Aug 31, 1989 |
| Grant date | Oct 15, 1991 |
| Priority date | — |
| Expiry date | Aug 31, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/165
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Recording and erasing optical information can be done by using an alloy film capable of forming two stable crystalline states differing in crystal texture and optical characteristics by being irradiated with optical energies under different conditions. The memory film includes 35-45 atom % of indium (In) and 55-65 atom % of antimony (Sb). The memory film may include an additional element M selected from the group consisting of Al, Si, P, S, Zn, Ga, Ge, As, Se, Ag, Cd, Sn, Te, Tl, Pb, Bi, and a combination of these elements, the composition of the memory film being expressed by the formula (In.sub.x Sb.sub.1-x).sub.1-y M.sub.y.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.