Electrophotographic photoreceptor with overlayer of amorphous Si with N
US5059501A · kind A · utility
4Cited by
6References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 1989 |
| Grant date | Oct 22, 1991 |
| Priority date | — |
| Expiry date | Oct 10, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08221
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrophotographic photoreceptor having a photosensitive layer essentially made of amorphous silicon formed over a support, and a surface layer made of amorphous silicon formed over the photosensitive layer. The amorphous silicon of the photosensitive layer includes boron of 0.1-5 ppm, and the amorphous silicon of the surface layer includes nitrogen. The layers of material formed over the support include a charge blocking layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.