Patent · US Expired

Process for neutralizing acceptor atoms in p-type InP

US5059551A · kind A · utility

12Cited by

2References

9Claims

0Family size

Assignee

Etat Francais, Represente par le Ministre des Pos Tes, Destelecommunicati ons et de l'Space-Centre National d'Etudes des Telecommunications (C.N.E.T.) · FR

Inventors

Jacques Chevallier · Maurepas, FR
Jean-Claude Pesant · Meudon, FR
Andrei Mircea · Yerres, FR
Rose Benoir · Paris, FR

Key dates

Filing date	Apr 10, 1990
Grant date	Oct 22, 1991
Priority date	—
Expiry date	Apr 10, 2010

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/925
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Process for neutralizing acceptor atoms in p-type InP. This process consists of subjecting to epitaxy a p-doped InP layer (4) and then a not intentionally doped Ga.sub.0.47 In.sub.0.53 As layer (6) on an InP semiinsulating substrate (2), followed by hydrogenating the InP layer exposing the assembly to a hydrogen plasma (8) with a power density below 0.07 W/cm.sup.2 at the most 250.degree. C.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.