Surface acoustic wave device
US5059847A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1990 |
| Grant date | Oct 22, 1991 |
| Priority date | — |
| Expiry date | Apr 10, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02574
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A surface acoustic wave device comprising a single crystal silicon substrate and a piezoelectric thin film of single crystal or C-axis-oriented polycrystalline aluminum nitride formed on the surface of the substrate. The C-axis of the piezoelectric thin film is set in a direction in which the projection vector of the C-axis on a plane containing the axis of propagation direction of a surface acoustic wave and a normal axis of the substrate makes an inclination angle .theta. of up to 60 degrees with the axis of propagation direction, whereby the device is given a coupling coefficient of at least 2% is given as maximum coupling coefficient of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.