Semiconductor device and method of producing semiconductor device
US5060033A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 17, 1989 |
| Grant date | Oct 22, 1991 |
| Priority date | — |
| Expiry date | Aug 17, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/605
Abstract
A semiconductor device composed of: a semiconductor substrate of a first conductivity type having a first impurity concentration; a belt-shaped impurity layer of the first conductivity type which is formed in the substrate so as to be spaced apart from a surface of the substrate and which has a second impurity concentration which is higher than the first concentration at a first depth from the surface of the substrate; a gate electrode formed on the substrate via a first insulating film; a second impurity layer of a second conductive type which is formed in the substrate on both sides of the gate electrode such as to be spaced apart from each other and has a third impurity concentration at a second depth from the surface of the semiconductor substrate, whose lower surface abuts against the first impurity layer or is present thereabove, the second impurity layer having a configuration projecting downward of the gate electrode at a portion thereof adjacent to the first impurity layer; side wall insulating films each formed on a side wall of the gate electrode; and a third impurity layer of the second conductivity type which is formed in the second impurity layer laterally of the side…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.