Thin film transistor of active matrix liquid crystal display
US5060036A · kind A · utility
47Cited by
2References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 28, 1989 |
| Grant date | Oct 22, 1991 |
| Priority date | — |
| Expiry date | Dec 28, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
Abstract
A thin film transistor of active matrix LCD comprising amorphous silicon layer formed on gate insulating layer and doped with phosphorous or boron, and insulating layer having two laminated structure and SiN layer formed between said two amorphous silicon layers so as to enhance characteristics of the TFT and protect short circuit in the cross points between the gate and source electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.