Amorphous silicon photosensor
US5060041A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 1988 |
| Grant date | Oct 22, 1991 |
| Priority date | — |
| Expiry date | Nov 14, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
An amorphous silicon photosensor comprising a substrate, a lower electrode formed on the substrate, an amorphous silicon photoelectric conversion layer formed on the lower electrode, and an upper electrode formed on the amorphous silicon photoelectric conversion layer, wherein the substrate is transparent to the incident light for photosensing, the lower electrode and the upper electrode comprises at least one of an electroconductive oxide or an electroconductive nitride, both of the electrodes for receiving the incident light for photosensing being transparent to the incident light, and the amorphous silicon photoelectric conversion layer comprises a plurality of amorphous silicon layers, and at least one of the amorphous silicon layers in contact with the electroconductive oxide or the electroconductive nitride comprises at least one of the same atoms as the constituent atoms of the electroconductive oxide or the electroconductive nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.