Patent · US Expired

Injection laser with at least one pair of monoatomic layers of doping atoms

US5060234A · kind A · utility

10Cited by

10References

3Claims

0Family size

Assignee

Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

Erdmann F. Schubert · Hazlet, US
Klaus Ploog · Stuttgart, DE
Albrecht Fischer · Löchgau, DE

Key dates

Filing date	Jan 4, 1991
Grant date	Oct 22, 1991
Priority date	—
Expiry date	Jan 4, 2011

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/548
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred device is injection laser in which case the Dirac-delta doped layers 45 and 46 are within intrinsic layer 43. The injection laser is constructed with a hetero structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.