Laminated semiconductor sensor with vibrating element
US5060526A · kind A · utility
81Cited by
5References
85Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 1989 |
| Grant date | Oct 29, 1991 |
| Priority date | — |
| Expiry date | May 30, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0019
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An electromechanical sensor is provided which comprises: a first silicon wafer which defines a resonant element; wherein the resonant element is doped with approximately the same impurity concentration as a background dopant concentration of the first wafer; and a second single crystal wafer which defines a device for coupling mechanical stress from the second wafer to the resonant element; wherein the first and second wafers are fusion bonded together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.