Plasma processing apparatus including three bus structures
US5061359A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1990 |
| Grant date | Oct 29, 1991 |
| Priority date | — |
| Expiry date | Jan 22, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/095
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system for plasma etching predetermined portions of material on the major surfaces of a plurality of substrates. The system comprises a plurality of electrodes substantially parallel to each other and to substrates alternating therewith. Each of the electrodes is of a hollow configuration and includes a pair of flat sides, each side having a plurality of tapered apertures therein. A means for directing a reactive gas through the apertures toward the substrates is provided. A first bus structure electrically connects the substrates and may be grounded. A second bus structure electrically connects alternate ones of the electrodes and is connected to a first radio frequency power source. A third bus structure electrically connects the remaining ones of the electrodes and is connected to a second radio frequency power source adapted to operate 180 degrees out of phase with the first power source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.