High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays
US5062115A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 28, 1990 |
| Grant date | Oct 29, 1991 |
| Priority date | — |
| Expiry date | Dec 28, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A high density surface emitting semiconductor LED array comprises disordered regions extending through a contact layer, a second confinement layer, an active layer and partially extending through a first confinement layer to define optical cavities therebetween the disordered regions, individual contacts on the contact layer aligned with each disordered region inject current through the optical cavity to a contact on a substrate causing emission of light from the active layer in the optical cavity through the surface of the contact layer. The first confinement layer can be replaced with a DBR to form an enhanced LED array. Both confinement layers can be replaced with DBRs to form a laser array. The first confinement layer can be replaced with a distributed Bragg reflector (DBR) and a dielectric mirror stack can be formed on the contact layer to form a laser array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.