Apparatus for growing vapor phase layer on semiconductor substrate
US5063031A · kind A · utility
47Cited by
5References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 21, 1990 |
| Grant date | Nov 5, 1991 |
| Priority date | — |
| Expiry date | Aug 21, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4584
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A reaction tube is fastened to a base plate by a plurality of bolts. A hollow shaft is secured to the base plate by a bearing interposed therebetween, and to be rotated by a motor. A casing secured to the shaft is arranged in the reaction tube, and has an opening closed by a susceptor on which a semiconductor substrate is to be placed. A heat-generating resistor is arranged in the casing. A thermocouple detects the temperature of the substrate. A temperature control circuit controls the temperature of the resistor by the output of the thermocouple.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.