Substrate having semiconductor-on-insulator structure with gettering sites and production method thereof
US5063113A · kind A · utility
15Cited by
9References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 21, 1989 |
| Grant date | Nov 5, 1991 |
| Priority date | — |
| Expiry date | Jul 21, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/901
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate has a semiconductor-on-insulator structure. The substrate has a base substrate, an insulator layer provided on the base substrate, an active substrate provided on the insulator layer and having gettering sites, and an active layer provided on the active substrate and made of a semiconductor. The gettering sites under the active layer eliminate crystal defects and impurities generated in the active layer during the semiconductor device production in which elements are formed in the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.