Silicon carbide light emitting diode having a pn junction
US5063421A · kind A · utility
25Cited by
6References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 1989 |
| Grant date | Nov 5, 1991 |
| Priority date | — |
| Expiry date | Aug 7, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/014
Abstract
A silicon carbide light emitting diode having a pn junction is disclosed which comprises a semiconductor substrate, a first silicon carbide single-crystal layer of one conductivity formed on the substrate, and a second silicon carbide single-crystal layer of the opposite conductivity formed on the first silicon carbide layer, the first and second silicon carbide layers constituting the pn junction, wherein at least one of the first and second silicon carbide layers contains a tetravalent transition element as a luminescent center.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.