Pressure-contacted semiconductor component
US5063436A · kind A · utility
1Cited by
19References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 1991 |
| Grant date | Nov 5, 1991 |
| Priority date | — |
| Expiry date | Feb 27, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a pressure-contacted large-area power semiconductor element, in which a substrate (1) is compressed between an anode-side (20) and a cathode-side compression plate (19), an improved contact is obtained by arranging, at least between one of the compression plates (19,20) and the associated contact (2,9), a metal foil (17) which is soldered to this contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.