Solid-state image sensor employing a gate and diode for bias charge injection
US5063449A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1989 |
| Grant date | Nov 5, 1991 |
| Priority date | — |
| Expiry date | Nov 16, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/153
Abstract
A solid-state image sensor comprises signal charge storage diodes formed in a semiconductor substrate, a plurality of signal charge read-out sections formed adjacent to the signal charge storage diodes on the semiconductor substrate, a plurality of signal charge transfer sections formed close to the signal charge read-out sections on the semiconductor substrate, pixel electrodes electrically coupled to the signal charge storage diodes, and a plurality of bias-charge injecting gates and bias-charge injecting diodes, which are provided adjacent to the signal charge transfer sections to inject bias charges into the signal charge storage diodes via the signal charge read-out sections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.