Silicon backside etch for semiconductors
US5064498A · kind A · utility
20Cited by
5References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 21, 1990 |
| Grant date | Nov 12, 1991 |
| Priority date | — |
| Expiry date | Aug 21, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/302
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A technique for analyzing defective semiconductor chips is disclosed. The silicon substrate of the chip is etched away, leaving the memory cells exposed for viewing. The method includes the steps of: removing oxide from the backside of a semiconductor device; and, placing the semiconductor device into a solution of choline and water. The solution etches away the substrate. The memory cells may be photographed and viewed by TEM and SEM techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.