Method of fabricating integrated silicon and non-silicon semiconductor devices
US5064781A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1990 |
| Grant date | Nov 12, 1991 |
| Priority date | — |
| Expiry date | Aug 31, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/08
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon and non-silicon semiconductor devices are fabricated on a single chip by bonding a silicon wafer to a non-silicon semiconductor substate. Portions of the non-silicon semiconductor substrate are selectively etched to expose the silicon wafer. Semiconductor devices may then be formed in the silicon wafer and on the non-silicon semiconductor substrate. Alternatively, selective epitaxial silicon may be grown where the non-silicon semiconductor substrate was removed. In another embodiment, a non-silicon semiconductor substrate having wells formed therein is bonded to a silicon wafer. The non-silicon semiconductor substrate is then polished until openings are provided to the silicon wafer. Further processing is carried out as described above.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.