Trench structured charge-coupled device
US5065203A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 1990 |
| Grant date | Nov 12, 1991 |
| Priority date | — |
| Expiry date | Jul 30, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/335
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The charge transfer efficiency of a two-phase charge-coupled device cell is enhanced by providing a three-tiered built-in potential in the channel of each cell. Two lower potential tiers form a trenched potential well in the cell for storing charge. A higher potential tier between the trenched potential well of a cell and the potential well of a preceding neighbor cell provides a potential barrier preventing backflow of charge from well-to-well. The potential trench is located at the downstream end of the well adjacent a succeeding neighbor cell of the CCD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.