Patent · US Expired

Trench structured charge-coupled device

US5065203A · kind A · utility

15Cited by
9References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 30, 1990
Grant dateNov 12, 1991
Priority date
Expiry dateJul 30, 2010

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/335
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

The charge transfer efficiency of a two-phase charge-coupled device cell is enhanced by providing a three-tiered built-in potential in the channel of each cell. Two lower potential tiers form a trenched potential well in the cell for storing charge. A higher potential tier between the trenched potential well of a cell and the potential well of a preceding neighbor cell provides a potential barrier preventing backflow of charge from well-to-well. The potential trench is located at the downstream end of the well adjacent a succeeding neighbor cell of the CCD.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.