Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors
US5065205A · kind A · utility
7Cited by
1References
8Claims
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Key dates
| Filing date | May 12, 1989 |
| Grant date | Nov 12, 1991 |
| Priority date | — |
| Expiry date | May 12, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/146
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.