Transverse-mode oscillation semiconductor laser device
US5065404A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1990 |
| Grant date | Nov 12, 1991 |
| Priority date | — |
| Expiry date | Jul 12, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A visible-light wavelength continuous oscillation laser is disclosed which has an N type GaAs substrate, an N type GaAlAs cladding layer formed on the substrate, and a non-doped GaAlAs active layer formed on the cladding layer. The laser further includes two N type GaAlAs layers, a P type GaAlAs optical guide layer, a P type cladding layer consisting of upper and lower portions, and a ridge section. The N type GaAlAs layers contact both sides of the ridge section. The optical guide layer is sandwiched between the upper and lower portions of the P type cladding layer, is located within the ridge section, and has a refractive index greater than that of the P type cladding layer. The distance between the active layer and the optical guide layer does not depend on the condition in which etching is performed to form the ridge section, but depends basically on the time required to grow crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.