Hydrothermal process for growing optical-quality single crystals
US5066356A · kind A · utility
18Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 5, 1990 |
| Grant date | Nov 19, 1991 |
| Priority date | — |
| Expiry date | Jan 5, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/918
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A hydrothermal process for growing a crystal of MTiOXO.sub.4 at an elevated temperature is disclosed which employs a growth medium comprising a mineralizer solution, and is characterized as employing aqeuous mineralizer solution in which the concentration of M is at least about 8 molar, and as employing a growth region temperature of less than about 500.degree. C. and/or a pressure of less than 14,000 psi during crystallization. M is selected from the group consisting of K, Rb, Tl and NH.sub.4 and mixtures thereof, and X is selected from the group consisting of P and As and mixtures thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.