Segmented cascode HBT for microwave-frequency power amplifiers
US5066926A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1990 |
| Grant date | Nov 19, 1991 |
| Priority date | — |
| Expiry date | Jun 26, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F1/22
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A cascode transistor configuration includes an input terminal for receiving the input signal, an output terminal for outputting the output signal and bass and emitter terminals connectable to ground. Each of a predetermined plurality of common-base heterojunction bipolar transistors (HBTs) has a base coupled to the base terminal, and a collector coupled to the support output terminal. Each of the predetermined plurality of common-emitter HBTs is associated with one of the common-base HBTs. Each common-emitter HBT also has a base coupled to the input terminal, an emitter coupled to the emitter terminal, and a collector coupled to only the emitter of the associated common-base HBT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.