Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer
US5070384A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 1990 |
| Grant date | Dec 3, 1991 |
| Priority date | — |
| Expiry date | Apr 12, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrically programmable antifuse element incorporates a composite interlayer of dielectric material and amorphous silicon interposed between two electrodes. The lower electrode may be formed from a refractory metal such as tungsten. Preferably, a thin layer of titanium is deposited over the tungsten layer and its surface is then oxidized to form a thin layer of titanium oxide which serves as the dielectric material of the composite dielectric/amorphous silicon interlayer. A layer of amorphous silicon is then deposited on top of the titanium oxide dielectric to complete the formation of the composite interlayer. A topmost layer of a refractory metal such as tungsten is then applied over the amorphous silicon to form the topmost electrode of the antifuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.