Trench-resident interconnect structure
US5070388A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 1990 |
| Grant date | Dec 3, 1991 |
| Priority date | — |
| Expiry date | Jan 19, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/911
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Interconnect metal is selectively provided in a network of trenches formed in the top surface of a semiconductor substrate containing multiple circuit devices, electrical contact to regions of which is to be provided. The trench network is formed so that it intersects the device regions, thus exposing the regions at sidewalls of the trench. On the floor of the trench a bottom layer of insulator material is provided, and conductive material (such as tungsten) is deposited on or grown from the trench sidewalls, in order to electrically couple device regions to one another. Because the device interconnect employs a trench network, not only are top surface contact apertures unnecessary, but, with a device region contact (from the trench sidewall) being made along the entire width of the region, device resistance can be decreased and performance improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.