CVD reactor vessel for forming a solid state electronic device
US5070814A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 1990 |
| Grant date | Dec 10, 1991 |
| Priority date | — |
| Expiry date | Nov 6, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD reactor vessel for forming a solid state electronic device comprising (a) a reaction zone laterally separated from a first zone, (b) support means for supporting a substrate in said reaction zone, (c) heating means for heating both said first zone and said reaction zone, (d) first supply means for supplying at least one first reactant into a gas stream flowing from said first zone to said reaction zone, and (e) second supplying means for supplying at least one second reactant into said gas stream between said first zone and said reaction zone, said second supply means including an injection tube extending through said first zone to a location between said first zone and said reaction zone, said injection tube having a widened outlet so that the flow velocity of said second reactant more closely matching the flow velocity of said gas stream, wherein said substrate receives a layer of material such as cadmium mercury telluride formed from said reactants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.