Self-aligned collector implant for bipolar transistors
US5071778A · kind A · utility
15Cited by
6References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 26, 1990 |
| Grant date | Dec 10, 1991 |
| Priority date | — |
| Expiry date | Jun 26, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method of forming bipolar devices and an improved bipolar device. The method provides for formation of an emitter contact on the base of a bipolar transistor followed by a collector implant. The collector implant varies the doping profile of the collector under the emitter contact but not adjacent the emitter contact, providing improved device characteristics. The collector implant penetrates the base of the transistor, preferably having a range deeper than the thickness of the single-poly contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.