Patent · US Expired

Method of making a semiconductor memory device

US5071784A · kind A · utility

8Cited by
4References
1Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 21, 1990
Grant dateDec 10, 1991
Priority date
Expiry dateNov 21, 2010

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B12/30

Abstract

A semiconductor memory device includes a memory cell array comprised of a plurality of memory cells each having a single transfer transistor and a single capacitor and a peripheral circuit including a plurality of drive transistors and adapted to drive the memory cell. The source and drain regions of the transfer transistor have an impurity concentration lower in level than that of the source and drain regions of the drive transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.