Method of depositing a silicon dioxide film
US5073408A · kind A · utility
14Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 7, 1990 |
| Grant date | Dec 17, 1991 |
| Priority date | — |
| Expiry date | Sep 7, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/111
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of depositing a silicon dioxide film on the surface of a substrate such as alkali-containing glass by bringing the substrate into contact with a treating solution comprising a hydrosilicofluoric acid solution supersaturated with silicon dioxide, which is obtained by increasing the temperature of a hydrosilicofluoric acid solution substantially saturated with silicon dioxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.