Producing a plasma containing beryllium and beryllium fluoride
US5073507A · kind A · utility
5Cited by
11References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 4, 1991 |
| Grant date | Dec 17, 1991 |
| Priority date | — |
| Expiry date | Mar 4, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/084
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma containing both beryllium ions and beryllium fluoride ions is achieved. Beryllium crystals are used as a cathode in an ionization chamber containing boron trifluoride gas. The boron trifluoride gas and the beryllium are ionized to produce both beryllium fluoride ions (BeF.sup.+) and beryllium ions (Be.sup.+). Beryllium fluoride ions are emitted to impact a semiconductor target and where they divide thereby implanting beryllium and fluorine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.