Semiconductor substrate and method for producing the same
US5073815A · kind A · utility
11Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 1990 |
| Grant date | Dec 17, 1991 |
| Priority date | — |
| Expiry date | Aug 21, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate that comprises: a base plate member made from a dielectric material; a refractory metal film covering at least a part of the base plate member; a single crystal semiconductor film formed on the refractory metal film; and an impurities-diffusion layer formed in said single crystal semiconductor film in a side contacting with the refractory metla film. The diffusion layer has a density grade gradually decreasing toward a direction away from the refractory metal film so that this impurities-diffusion layer comes in ohmic contact with the refractory metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.