Method of making a BIC memory cell having contact openings with straight sidewalls and sharp-edge rims
US5075249A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1989 |
| Grant date | Dec 24, 1991 |
| Priority date | — |
| Expiry date | Mar 31, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A BIC memory cell device comprises a first insulating layer covering a MOS structure, a first penetrating opening in the first insulating layer in correspondence to a drain region and defined by an inclined first side wall which defines the diameter of the first opening such that the diameter increases towards a top surface of the first insulating layer, a second penetrating opening in the first insulating layer in correspondence to a source region and defined by a second side wall having a straight vertical cross section, a third penetrating opening in the first insulating layer in correspondence to a gate electrode and defined by a third side wall having a straight vertical cross section, a second insulating layer provided on the first insulating layer in correspondence to the drain region, a first wiring electrode deposited such that the second insulating layer is sandwiched between the first wiring electrode and the drain region, and second and third wiring electrodes contacting with the source region and the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.