Tungsten silicide self-aligned formation process
US5075251A · kind A · utility
18Cited by
7References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 1989 |
| Grant date | Dec 24, 1991 |
| Priority date | — |
| Expiry date | Sep 8, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming tungsten or molybdenum silicide on silicon apparent regions (6) of a silicon wafer surface (1) also comprising oxidized regions (2) includes the steps consisting in uniformly coating the wafer with a tungsten or molybdenum layer (10) and annealing at a temperature ranging from 700.degree. C. to 1000.degree. C. The annealing step is carried out in presence of a low pressure gas forming a chemical composite with tungsten or molybdenum. The composite is then selectively etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.