High frequency oscillator comprising cointegrated thin film resonator and active device
US5075641A · kind A · utility
128Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 1990 |
| Grant date | Dec 24, 1991 |
| Priority date | — |
| Expiry date | Dec 4, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N39/00
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A cointegrated high frequency oscillator including a thin film resonator and active devices formed on the same semiconductor substrate and by a process which is compatible with formation of both the thin film resonator and the active devices. The processes utilized in formation of the thin film resonator are adapted to microelectronic processing techniques such that the steps of formation of the active devices and the thin film resonator can be intermixed to the degree necessary to allow, for example, the metallization layers to serve as elements both of the active devices and the thin film resonator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.