Method of manufacturing perovskite lead scandium tantalate
US5076901A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 1990 |
| Grant date | Dec 31, 1991 |
| Priority date | — |
| Expiry date | Jan 18, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2004/80
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method is described of manufacturing perovskite lead scandium tantalate comprising the pre-reaction of scandium and tantalum oxides at temperatures between 1000.degree. C. and 1400.degree. C. to form scandium tantalate. The scandium tantalate is then reacted with lead oxide to form the desired perovskite phase lead scandium tantalate. In one embodiment there is described a method for the deposition of perovskite lead scandium tantalate films from metal organic precusors. The availability of metal organic precursors allows the deposition of thin films directly from solution or by MOCVD techniques. One particular material, lead scandium tantalate Pb(Sc.sub.0.5 Ta.sub.0.5)O.sub.3, is described. The principal features of the invention are the deposition of scandium and tantalum components from solution or by MOCVD onto the required substrate. These are then prereacted to yield scandium tantalate. A lead containing film or vapor is then reacted with the scandium tantalate to form the perovskite phase lead scandium tantalate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.