Manufacturing high purity/low chlorine content silicon by feeding chlorosilane into a fluidized bed of silicon particles
US5077028A · kind A · utility
27Cited by
8References
13Claims
0Family size
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Inventor
Key dates
| Filing date | Mar 6, 1990 |
| Grant date | Dec 31, 1991 |
| Priority date | — |
| Expiry date | Mar 6, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B33/03
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of manufacturing high-purity silicon crystals, which comprises depositing silicon on the surface of high-purity silicon particles, while feeding into a fluidized bed reactor at a high temperature a material gas consisting of high purity chlorosilane and a diluting gas, said method having a silicon deposition rate in excess of about 0.4 .mu.m/min.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.