Integrated high voltage transistors having minimum transistor to transistor crosstalk
US5077594A · kind A · utility
1Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1990 |
| Grant date | Dec 31, 1991 |
| Priority date | — |
| Expiry date | Mar 16, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated high voltage transistors having minimum transistor to transistor crosstalk are fabricated in refilled epitaxial tubs, which are formed in a heavily doped substrate. The heavily doped substrate provides the isolation between each transistor, and thus provides for minimum transistor to transistor crosstalk. The voltage capability of the transistor is increased by forming the base surrounding the collector contact in the refilled epitaxial tub.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.