X-ray lithography source
US5077774A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 1990 |
| Grant date | Dec 31, 1991 |
| Priority date | — |
| Expiry date | Aug 21, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K2201/064
- WIPO fieldEngines, pumps, turbines
- WIPO sectorMechanical engineering
Abstract
A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.