Reactor vessel for the growth of heterojunction devices
US5077875A · kind A · utility
59Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 1991 |
| Grant date | Jan 7, 1992 |
| Priority date | — |
| Expiry date | Mar 12, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/48
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A metalorganic chemical vapor deposition (MOCVD) reactor vessel is provided for the growth of Group II-VI, Group III-V, or Group IV layers particularly for use in thin heterostructure devices. The reactor vessel includes a chamber having a top surface substantially parallel to a semiconductor substrate disposed within the chamber and an inlet through which a vapor stream is directed. The chamber further includes a plate having a plurality of apertures disposed therethrough and a block disposed adjacent to the plate, to increase the uniformity and decrease the turbulence of the vapor stream.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.