Process for etching a metal oxide coating and simultaneous deposition of a polymer film, application of this process to the production of a thin film transistor
US5079178A · kind A · utility
35Cited by
23References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1989 |
| Grant date | Jan 7, 1992 |
| Priority date | — |
| Expiry date | Dec 8, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The process of the invention consists of subjecting a metal oxide coating (106, 108), located on a glass substrate (100), to the action of a gaseous plasma (109) containing 10 to 88% by volume of hydrogen, 2 to 30% by volume of a hydrocarbon and 10 to 50% of an inert vector gas, bringing about the formation of a polymer coating (110) on the parts of the substrate not provided with oxide, by dissocation of the gaseous mixture, and the partial chemical etching of the oxide (106, 108) by the formation of organometallic compounds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.