Process of making GaAs electrical circuit devices with Langmuir-Blodgett insulator layer
US5079179A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 1990 |
| Grant date | Jan 7, 1992 |
| Priority date | — |
| Expiry date | Nov 27, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/939
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A GaAs circuit structure is described which interposes a Langmuir-Blodgett (L-B) layer between the substrate and a conductive contact. The thickness of the layer is controlled to determine the operating characteristics of the device. The head group of the L-B molecule is chosen so that it passivates the surface states of the particular GaAs substrate being used. Certain preferred acids and amino head groups are disclosed. The L-B layer has been found to both increase the gate barrier height for an FET, and to passivate dangling bonds and surfaces defects in the GaAs substrate to enable inversion mode operation. Specific FET and diode devices are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.